1997 Jun 17

3

Philips Semiconductors

Product specification

NPN switching transistors

BCY58; BCY59

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCY58

−

32

V

BCY59

−

45

V

collector-emitter voltage

open base

BCY58

−

32

V

BCY59

−

45

V

emitter-base voltage

open collector

−

7V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

200

mA

total power dissipation

−

340

mW

−

1W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient in free air

450

K/W

thermal resistance from junction to case

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

BCY58

−−

10

nA

−−

10

µA

collector cut-off current

BCY59

−−

10

nA

−−

10

µA

emitter cut-off current

−−

10

nA

DC current gain

BCY58/VII; BCY59/VII

−

20

−

BCY58/VIII; BCY59/VIII

20

95

−

BCY58/IX; BCY59/IX

40

190

−

BCY58/X; BCY59/X

100

300

−