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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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BCY59IX 数据表(PDF) 4 Page - NXP Semiconductors |
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BCY59IX 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1997 Jun 17 4 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 hFE DC current gain IC = 2 mA; VCE =5V BCY58/VII; BCY59/VII 120 170 220 BCY58/VIII; BCY59/VIII 180 250 310 BCY58/IX; BCY59/IX 250 350 460 BCY58/X; BCY59/X 380 500 630 hFE DC current gain IC = 10 mA; VCE =1V BCY58/VII; BCY59/VII 80 250 − BCY58/VIII; BCY59/VIII 120 300 400 BCY58/IX; BCY59/IX 160 390 630 BCY58/X; BCY59/X 240 550 1000 hFE DC current gain IC = 100 mA; VCE =1V BCY58/VII; BCY59/VII 40 −− BCY58/VIII; BCY59/VIII 45 −− BCY58/IX; BCY59/IX 60 −− BCY58/X; BCY59/X 60 −− VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA 50 100 350 mV IC = 100 mA; IB = 2.5 mA 150 250 700 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.25 mA 600 700 850 mV IC = 100 mA; IB = 2.5 mA 750 875 1200 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz −− 5pF Ce emitter capacitance IC =ic = 0; VEB = 500 mV; f = 1 MHz −− 15 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 150 −− MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz −− 10 dB Switching times (between 10% and 90% levels) ton turn-on time ICon = 10 mA; IBon = 1 mA; IBoff = −1mA − 85 150 ns td delay time − 35 − ns tr rise time − 50 − ns toff turn-off time − 480 800 ns ts storage time − 400 − ns tf fall time − 80 − ns ton turn-on time ICon = 100 mA; IBon =10mA; IBoff = −10 mA − 55 150 ns td delay time − 5 − ns tr rise time − 50 − ns toff turn-off time − 450 800 ns ts storage time − 250 − ns tf fall time − 200 − ns SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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