PE898BA datasheet(1/6 Pages) NIKOSEM

部件名	PE898BA

功能描述	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

制造商	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

网页	http://www.niko-sem.com

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1 / 6 page

REV 1.1

1

L-47-5

N-Channel Enhancement Mode

Field Effect Transistor

PE898BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

G

D

S

100% UIS Tested

100% Rg Tested

G

S

#1

D

D D

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R

DS(on) to Minimize Conduction Losses.

• Ohmic Region Good R

DS(on) Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Computer for DC to DC Converters Applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

4

TC = 25 °C

ID

52

A

TC = 100 °C

33

Pulsed Drain Current

1

IDM

82

Continuous Drain Current

TA = 25 °C

ID

19

TA = 70 °C

15

Avalanche Current

IAS

31

Avalanche Energy

L = 0.05mH

EAS

24

mJ

Power Dissipation

TC = 25 °C

PD

23

W

TC = 100 °C

9.4

Power Dissipation

3

TA = 25 °C

PD

3.1

W

TA = 70 °C

2

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

G. GATE

D. DRAIN

S. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

4.8mΩ

52A

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