REV 1.1

2

L-47-5

N-Channel Enhancement Mode

Field Effect Transistor

PE898BA

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

t ≦10s

RJA

40

°C / W

Junction-to-Ambient

2

Steady-State

RJA

85

Junction-to-Case

Steady-State

RJC

5.3

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

3The Power dissipation is based on R

JA t ≦10s value.

4Current limited by package.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

2

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 55 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 4.5V, ID = 13A

6.4

8.2

mΩ

VGS = 10V, ID = 13A

3.6

4.8

Forward Transconductance

1

gfs

VDS = 5V, ID = 13A

44

S

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

1024

pF

Output Capacitance

Coss

540

Reverse Transfer Capacitance

Crss

45

Gate Resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

1.7

Ω

Total Gate Charge

2

Qg

VGS = 10V

VDS = 15V , VGS = 10V,

ID = 13A

17.8

nC

VGS = 4.5V

9.2

Gate-Source Charge

2

Qgs

2.8

Gate-Drain Charge

2

Qgd

3.9

Turn-On Delay Time

2

td(on)

VDS = 15V ,

ID  13A, VGS = 10V, RGEN =6Ω

8

nS

Rise Time

2

tr

55

Turn-Off Delay Time

2

td(off)

25

Fall Time

2

tf

69