STTH312 datasheet(3/8 Pages) STMICROELECTRONICS

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STTH312

Characteristics

3/8

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

115

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 3 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125° C

9.5

Softness factor

IF = 3 A, dIF/dt = -200 A/µs,

VR = 600 V, Tj = 125° C

tfr

Forward recovery time

IF = 3 A

dIF/dt = 50 A/µs

VFR = 1.5 x VFmax, Tj = 25° C

350

VFP

Forward recovery voltage

IF = 3 A, dIF/dt = 50 A/µs,

Tj = 25° C

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

P(W)

δ=tp/T

δ = 0.05

δ = 1

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

(A)

(V)

T =25°C

(maximum values)

T =150°C

(maximum values)

T =150°C

(typical values)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

F(AV)

V =600V

T =125°C

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