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BFG10/X 数据表(PDF) 7 Page - NXP Semiconductors |
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BFG10/X 数据表(HTML) 7 Page - NXP Semiconductors |
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7 / 10 page ![]() 1995 Aug 31 7 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X List of components used in test circuit (see Fig.7) Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 1 ⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF C2, C3, C4, C5, C6, C7 multilayer ceramic chip capacitor; note 1 0.86 pF C8 multilayer ceramic chip capacitor; note 1 1.1 pF C12, C13 electrolytic capacitor 470 µF; 10 V 2222 031 34471 C14, C15, C16 multilayer ceramic chip capacitor; note 1 10 nF L1 stripline; note 2 length 28.5 mm width 0.93 mm L2 stripline; note 2 length 2.3 mm width 0.93 mm L3 stripline; note 2 length 3.1 mm width 0.93 mm L4 stripline; note 2 length 3.3 mm width 0.93 mm L5 stripline; note 2 length 16.3 mm width 0.93 mm L6 stripline; note 2 length 10 mm width 0.93 mm L7 stripline; note 2 length 4.4 mm width 0.4 mm L8 stripline; note 2 length 19.3 mm width 0.93 mm L9 stripline; note 2 length 19.7 mm width 0.4 mm L10 micro choke T1 BD228 R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209 R2 metal film resistor 530 Ω; 0.4 W 2322 157 15301 |
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