1995 Aug 31

2

Philips Semiconductors

Product specification

NPN 2 GHz RF power transistor

BFG10; BFG10/X

FEATURES

• High power gain

• High efficiency

• Small size discrete power amplifier

• 1.9 GHz operating area

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Common emitter class-AB

operation in hand-held radio

equipment at 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor

encapsulated in plastic, 4-pin

dual-emitter SOT143 package.

PINNING

PIN

DESCRIPTION

BFG10 (see Fig.1)

1

collector

2

base

3

emitter

4

emitter

BFG10/X (see Fig.1)

1

collector

2

emitter

3

base

4

emitter

Fig.1 SOT143.

handbook, 2 columns

Top view

MSB014

12

3

4

MARKING

TYPE NUMBER

CODE

BFG10

N70

BFG10/X

N71

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

MODE OF OPERATION

f

(GHz)

(V)

(mW)

(dB)

(%)

Pulsed, class-AB, duty cycle: < 1 : 8

1.9

3.6

200

≥5

≥50

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

20

V

collector-emitter voltage

open base

−

8V

emitter-base voltage

open collector

−

2.5

V

collector current (DC)

−

250

mA

average collector current

−

250

mA

total power dissipation

−

400

mW

storage temperature

−65

+150

°C

junction temperature

−

175

°C