BFG10SLASHX datasheet(2/9 Pages) PHILIPS

2 / 9 page

1995 Sep 22

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BFG10W/X

FEATURES

• High efficiency

• Small size discrete power amplifier

• 900 MHz and 1.9 GHz operating

areas

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Common emitter class-AB

operation in hand-held radio

equipment up to 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor

encapsulated in a plastic, 4-pin

dual-emitter SOT343 package.

PINNING

DESCRIPTION

collector

emitter

base

emitter

Fig.1 SOT343.

Marking code: T5.

fpage

Top view

MBK523

QUICK REFERENCE DATA

RF performance at Tamb =25 °C in a common-emitter test circuit.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

MODE OF OPERATION

(GHz)

VCE

(V)

(mW)

(dB)

ηc

(%)

Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms

1.9

3.6

200

≥5

≥50

Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms

0.9

650

≥10

≥50

0.9

360

≥12.5

≥50

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

250

IC(AV)

average collector current

−

250

Ptot

total power dissipation

up to Ts = 102 °C; note 1

−

400

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to

soldering point

up to Ts = 102 °C; note 1;

Ptot = 400 mW

180

K/W

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