BFG10SLASHX datasheet(3/9 Pages) PHILIPS

3 / 9 page

1995 Sep 22

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BFG10W/X

CHARACTERISTICS

Tj =25 °C (unless otherwise speciﬁed).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC = 0.1 mA

−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC =5mA

−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE = 0.1 mA

2.5

−

ICES

collector cut-off current

VCE =6V; VBE =0

−

100

µA

hFE

DC current gain

IC = 50 mA; VCE =5V

−

collector capacitance

IE =ie = 0; VCB =6V; f=1MHz

−

3pF

Cre

feedback capacitance

IC = 0; VCE = 6 V; f = 1 MHz

−

2pF

Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.

handbook, full pagewidth

MBG431

10−5

10−6

10−4

10−3

10−2

10−1

103

102

Zth j-a

(K/W)

tp (s)

δ = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

t p

δ =

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