ART150PE_ART150PEG

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© Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet

Rev. 1 — 13 January 2023

4 of 19

ART150PE; ART150PEG

Power LDMOS transistor

6.

Characteristics

Table 6.

DC characteristics

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 1.11 mA

203

208

-

V

VGS(th)

gate-source threshold voltage

VDS =20 V; ID = 111 mA

1.5

2.1

2.5

V

IDSS

drain leakage current

VGS =0V; VDS =65V

-

-

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =20 V

-15.1

-

A

IGSS

gate leakage current

VGS =11V; VDS = 0 V

-

-

140

nA

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =3.885 A

-0.497 -



Table 7.

AC characteristics

Tj = 25 C; unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

Crs

feedback capacitance

VGS =0V; VDS =65 V; f=1MHz

-

0.88

-

pF

Ciss

input capacitance

VGS =0V; VDS =65 V; f=1MHz

-

116

-

pF

Coss

output capacitance

VGS =0V; VDS =65 V; f=1MHz

-

35

-

pF

VGS =0V; f = 1 MHz

Fig 2.

Output capacitance as a function of drain-source voltage; typical values

Table 8.

RF characteristics

Test signal: CW pulsed; tp =100 s;  = 10 %; f = 108 MHz; RF performance at VDS =65V;

IDq =20mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Gp

power gain

PL = 150 W

29

31.2

-

dB

RLin

input return loss

PL = 150 W

-

24

9dB



D

drain efficiency

PL = 150 W

70

75.3

-

%

amp01815

0

10

20

30

40

50

60

70

0

100

200

300

400

VDS (V)

Coss

oss

Coss

(pF)

(pF)

(pF)