BLP5LA55SG

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© Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet

Rev. 1 — 7 April 2023

13 of 20

BLP5LA55SG

Power LDMOS transistor

7.3.4 1-Tone CW measurements (f = 520 MHz)

VDS = 13.6 V; IDq = 80 mA.

(1) f = 380 MHz

(2) f = 400 MHz

(3) f = 410 MHz

(4) f = 420 MHz

(5) f = 430 MHz

(6) f = 450 MHz

VDS = 13.6 V; IDq = 80 mA.

(1) f = 380 MHz

(2) f = 400 MHz

(3) f = 410 MHz

(4) f = 420 MHz

(5) f = 430 MHz

(6) f = 450 MHz

Fig 13. Power gain as a function of output power;

typical values

Fig 14. Output power as a function of input power;

typical values

amp01407

0

20

40

60

80

100

17

19

21

23

25

PL (W)

Gp

Gp

(dB)

(dB)

(dB)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

(4)

(4)

(4)

(5)

(5)

(5)

(6)

(6)

(6)

amp01408

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

10

30

50

70

90

Pi (W)

PL

PL

(W)

(W)

(W)

(1)

(1)

(1)

(2)

(2)

(2)

(3)

(3)

(3)

(4)

(4)

(4)

(5)

(5)

(5)

(6)

(6)

(6)

VDS = 13.6 V; IDq = 100 mA.

VDS = 13.6 V; IDq = 100 mA.

Fig 15. Drain efficiency as a function of output power;

typical values

Fig 16. Power gain as a function of output power;

typical values

amp01409

15

25

35

45

55

65

40

50

60

70

80

PL (W)

ηD

ηD

(%)

(%)

(%)

amp01410

15

25

35

45

55

65

18

19

20

21

22

PL (W)

Gp

Gp

(dB)

(dB)

(dB)