BLP5LA55SG

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© Ampleon Netherlands B.V. 2023. All rights reserved.

Product data sheet

Rev. 1 — 7 April 2023

2 of 20

BLP5LA55SG

Power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

5.

Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain

2gate

3source

[1]

1

2

3

sym112

1

3

2

Table 3.

Ordering information

Package name

Orderable part number

12NC

Packing description

Min. orderable

quantity (pieces)

TO-270-2G-1

BLP5LA55SGZ

9349 606 49515 TR13; 500-fold; 24 mm; dry pack

500

BLP5LA55SGXY

9349 606 49538 TR7; 100-fold; 24 mm; dry pack

100

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

30

V

VGS

gate-source voltage

5+13

V

Tstg

storage temperature

65

+150

C

Tj

junction temperature

[1] -225

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case Tcase =80 C; VDS = 13.6 V;

PL =55W

0.46

K/W