STTH506 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Characteristics

STTH506

2/9

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.07 x IF(AV) + 0.066 IF

(RMS)

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC, DPAK

3.5

° C/W

TO-220FPAC

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 150° C

130

(2)

Forward voltage drop

Tj = 25° C

IF = 5 A

1.85

Tj = 150° C

1.10

1.40

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 0.5 A, Irr = 0.25 A, IR = 1 A,

Tj = 25° C

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 5 A, dIF/dt = -100 A/µs,

VR = 400 V, Tj = 25° C

3.5

tfr

Forward recovery time

IF = 5 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

180

VFP

Forward recovery voltage

IF = 5 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

(W)

F(AV)

(A)

F(AV)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 1

δ = 0.5

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(A)

(V)

T =25°C

(maximum values)

T =150°C

(maximum values)

T =150°C

(typical values)

STTH506 数据表(PDF) 2 Page - STMicroelectronics

STTH506 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

STTH506 数据表(PDF) 2 Page - STMicroelectronics

STTH506 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载