STTH506 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STTH506

Characteristics

3/9

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AC, DPAK)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAC)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

TO-220AC

DPAK

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

Single pulse

TO-220FPAC

Figure 5.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 6.

Reverse recovery time versus

dIF/dt (typical values)

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

I =0.25 x I

FF(AV)

V =400V

T =125°C

100

150

200

250

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

F(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

Figure 7.

Reverse recovery charges versus

dIF/dt (typical values)

Figure 8.

Softness factor versus

dIF/dt (typical values)

100

150

200

250

300

350

100

150

200

250

300

350

400

450

500

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

dI /dt(A/µs)

Q (nC)

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

100

150

200

250

300

350

400

450

500

S factor

I = 2 x I

T = 125° C

FF(AV)

V = 400 V

dI /dt(A/µs)

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