MCM69C433

•SCM69C433

4

MOTOROLA FAST SRAM

Rating

Symbol

Value

Unit

Supply Voltage (see Note 2)

VDD

4.6

V

Voltage Relative to VSS (see Note 2)

Vin

–0.5 to VDD + 3 V

V

Output Current per Pin

Iout

±20

mA

Package Power Dissipation (see Note 3)

PD

—

W

Temperature Under Bias (see Note 3)

Commercial

Industrial

Tbias

–10 to 85

–40 to 85

°C

Operating Temperature

Commercial

Industrial

TA

0 to 70

–40 to 85

°C

Storage Temperature

Tstg

–55 to 125

°C

NOTES:

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for extended

periods of time could affect device reliability.

2. All voltages are referenced to VSS.

3. Power dissipation capability will be dependent upon package characteristics and use

environment. See Package Thermal Characteristics.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ±5%, TJ < 120°C, Unless Otherwise Noted)

Parameter

Symbol

Min

Typ

Max

Unit

Power Supply Voltage

VDD

3.1

3.3

3.5

V

Operating Temperature (Junction)

TJ

—

—

120

°C

Input Low Voltage

VIL

–0.5*

0

0.8

V

Input High Voltage

VIH

2.2

3

5.5

V

*VIL (min) = –3.0 V ac (pulse width v 20 ns).

DC CHARACTERISTICS AND SUPPLY CURRENTS

Parameter

Symbol

Min

Max

Unit

Active Power Supply Current

IDDA

—

300

mA

Input Leakage Current (0 V

v Vin v VDD)

Ilkg(I)

—

±1

µA

Output Leakage Current (0 V

v Vin v VDD)

Ilkg(O)

—

±1

µA

Output Low Voltage (IOL = 8 mA)

VOL

—

0.4

V

Output High Voltage (IOH = –4 mA)

VOH

2.4

—

V

PACKAGE THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Thermal Resistance Junction to Ambient (200 lfpm, 4 Layer Board) (see Note 2)

R

θJA

36

°C/W

Thermal Resistance Junction to Board (Bottom) (see Note 3)

R

θJB

19

°C/W

Thermal Resistance Junction to Case (Top) (see Note 4)

R

θJC

8

°C/W

NOTES:

1. RAM junction temperature is a function of on–chip power dissipation, package thermal impedance, mounting site temperature, and

mounting site thermal impedance.

2. Per SEMI G38–87.

3. Indicates the average thermal impedance between the die and the mounting surface.

4. Indicates the average thermal impedance between the die and the case top surface. Measured via the cold plate method (MIL SPEC–883

Method 1012.1).

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to this high–impedance

circuit.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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