BFS520 datasheet(3/11 Pages) PHILIPS

3 / 11 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS520

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj =25 °C, unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. IC = 20 mA; VCE = 6 V; RL =50 Ω; f = 900 MHz; Tamb =25 °C;

fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz.

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-s

thermal resistance from junction to

soldering point

up to Ts =118 °C; note 1

190 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCE =6 V

−−

hFE

DC current gain

IC = 20mA; VCE = 6 V

120

250

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

collector capacitance

IE =ie = 0; VCB = 6 V; f = 1 MHz

−

0.5

−

Cre

feedback capacitance

IC = 0; VCB = 6 V; f = 1 MHz

−

0.4

−

transition frequency

IC = 20 mA; VCE = 6 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 20 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

IC = 20 mA; VCE = 6 V; f = 2 GHz;

Tamb =25 °C

−

S

21

insertion power gain

IC = 20 mA; VCE = 6 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

s = Γopt;IC = 5 mA; VCE =6 V;

f = 900 MHz; Tamb =25 °C

−

1.1

1.6

s = Γopt;IC = 20 mA; VCE =6 V;

f = 900 MHz; Tamb =25 °C

−

1.6

2.1

s = Γopt;IC = 5 mA; VCE =6 V;

f = 2 GHz; Tamb =25 °C

−

1.9

−

PL1

output power at 1 dB gain

compression

Ic = 20 mA; VCE = 6 V; RL =50 Ω;

f = 900 MHz; Tamb =25 °C

−

dBm

ITO

third order intercept point

note 2

−

dBm

10 log

–





–





--------------------------------------------------------------

dB.

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