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BFS520 数据表(PDF) 4 Page - NXP Semiconductors |
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BFS520 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 11 page ![]() September 1995 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 0 200 MRC030 - 1 150 P tot (mW) T s (o C) Fig.3 DC current gain as a function of collector current. VCE = 6 V; Tj =25 °C. handbook, halfpage MRC028 0 50 100 150 200 10−1 10−2 110 102 IC (mA) h FE Fig.4 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage MRC021 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0246 8 10 V (V) CB C re (pF) Fig.5 Transition frequency as a function of collector current. f = 1 GHz; Tamb =25 °C. handbook, halfpage MRC022 0 2 4 6 8 10 12 1 10 100 f T (GHz) IC (mA) 3 V = 8 V CE V |
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