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ES3DP 数据表(PDF) 3 Page - Nexperia B.V. All rights reserved |
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ES3DP 数据表(HTML) 3 Page - Nexperia B.V. All rights reserved |
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3 / 14 page ![]() Nexperia ES3DP 200 V, 3 A hyperfast PN-rectifier ES3DP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet 3 August 2017 3 / 14 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 200 V VR reverse voltage - 200 V VRMS RMS voltage Tj = 25 °C - 140 V IF forward current δ = 1 ; Tsp ≤ 121 °C - 4.24 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; square wave; Tsp ≤ 128 °C - 3 A IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; single half sine wave (applied at rated load condition) - 60 A [1] - 835 mW Ptot total power dissipation Tamb ≤ 25 °C [2] - 1.316 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. |
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