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AM29F800T 数据表(PDF) 27 Page - Advanced Micro Devices

部件名 AM29F800T
功能描述  8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  41 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F800T 数据表(HTML) 27 Page - Advanced Micro Devices

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8/18/97
Am29F800T/Am29F800B
27
PR E L IM IN A R Y
AC CHARACTERISTICS
Write/Erase/Program Operations
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Unprotect operation.
4. Output Driver Disable Time.
Parameter
Symbols
Description
-70
-90
-120
-150
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 2)
Min
70
90
120
150
ns
tAVWL
tAS
Address Setup Time
Min
0
0
0
0
ns
tWLAX
tAH
Address Hold Time
Min
45
45
50
50
ns
tDVWH
tDS
Data Setup Time
Min
30
45
50
50
ns
tWHDX
tDH
Data Hold Time
Min
0
0
0
0
ns
tOEH
Output
Enable
Hold Time
Read (Note 2)
Min
0
0
0
0
ns
Toggle and Data Polling (Note 2)
Min
10
10
10
10
ns
tGHWL
tGHWL
Read Recover Time Before Write
(OE High to WE Low)
Min
0
0
0
0
ns
tELWL
tCS
CE Setup Time
Min
0
0
0
0
ns
tWHEH
tCH
CE Hold Time
Min
0
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
45
50
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
7
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
111
1
sec
Max
8
8
8
8
sec
tVCS
VCC Set Up Time (Note 2)
Min
50
50
50
50
µs
tVIDR
Rise Time to VID
Min
500
500
500
500
ns
tRP
RESET Pulse Width
Min
500
500
500
500
ns
tBUSY
Program/Erase Valid to RY/BY Delay (Note 2)
Min
30
35
50
55
ns
tRSP
RESET Setup Time for Temporary Sector Unprotect
(Notes 2, 3)
Min
4
4
4
4
µs



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