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AM29F800T 数据表(PDF) 34 Page - Advanced Micro Devices

部件名 AM29F800T
功能描述  8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  41 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F800T 数据表(HTML) 34 Page - Advanced Micro Devices

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34
Am29F800T/Am29F800B
8/18/97
PR E L IM IN A R Y
AC CHARACTERISTICS
Write/Erase/Program Operations
Alternate CE Controlled Writes
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
Parameter
Symbols
Description
-70
-90
-120
-150
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 2)
Min
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
0
0
0
ns
tELAX
tAH
Address Hold Time
Min
45
45
50
50
ns
tDVEH
tDS
Data Setup Time
Min
30
45
50
50
ns
tEHDX
tDH
Data Hold Time
Min
0
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
0
ns
tOEH
Output Enable
Hold Time
Read (Note 2)
Min
0
0
0
0
ns
Toggle and Data Polling (Note 2)
Min
10
10
10
10
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
0
0
0
ns
tWLEL
tWS
WE Setup Time
Min
0
0
0
0
ns
tEHWH
tWH
WE Hold Time
Min
0
0
0
0
ns
tELEH
tCP
CE Pulse Width
Min
35
45
50
50
ns
tEHEL
tCPH
CE Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
7
7
µs
Word Programming Operation
Typ
14
14
14
14
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
111
1
sec
Max
8
8
8
8
sec
tFLQZ
BYTE Switching Low to Output High Z (Note 2)
Max
20
30
30
30
ns



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