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STF5N52U 数据表(PDF) 2 Page - STMicroelectronics

部件名 STF5N52U
功能描述  N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a TO-220FP package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF5N52U 数据表(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
4.4
A
ID
Drain current (continuous) at TC= 100 °C
2.8
IDM (1)
Drain current (pulsed)
17.6
A
PTOT
Total power dissipation at TC = 25 °C
25
W
dv/dt (2)
Peak diode recovery voltage slope
20
V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1 s; TC=25 °C)
2.5
kV
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
ESD
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
2.8
kV
1. Pulse width limited by safe operating area.
2. ISD ≤ 4.4 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
5
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)
4.4
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
170
mJ
STF5N52U
Electrical ratings
DS12943 - Rev 1
page 2/13
Obsolete
Product(s)
- Obsolete
Product(s)



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