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STF5N52U 数据表(PDF) 2 Page - STMicroelectronics |
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STF5N52U 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 13 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 4.4 A ID Drain current (continuous) at TC= 100 °C 2.8 IDM (1) Drain current (pulsed) 17.6 A PTOT Total power dissipation at TC = 25 °C 25 W dv/dt (2) Peak diode recovery voltage slope 20 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2.8 kV 1. Pulse width limited by safe operating area. 2. ISD ≤ 4.4 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax) 4.4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 170 mJ STF5N52U Electrical ratings DS12943 - Rev 1 page 2/13 Obsolete Product(s) - Obsolete Product(s) |
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