2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

525

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 525 V

10

µA

VGS = 0 V, VDS = 525 V,

TC = 125 °C(1)

500

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 2.2 A

1.25

1.50

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 25 V, f = 1 MHz, VGS = 0 V

-

529

-

pF

Coss

Output capacitance

-

71

-

pF

Crss

Reverse transfer capacitance

-

13.4

-

pF

Coss eq. (1)

Equivalent output capacitance

VDS = 0 V to 420 V, VGS = 0 V

-

11

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

6

-

Ω

Qg

Total gate charge

VDD = 416 V, ID = 4.4 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

-

16.9

-

nC

Qgs

Gate-source charge

-

4.2

-

nC

Qgd

Gate-drain charge

-

8.4

-

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 260 V, ID = 2.2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

-

11.4

-

ns

tr

Rise time

-

13.6

-

td(off)

Turn-off delay time

-

23.1

-

tf

Fall time

-

15

-

STF5N52U

Electrical characteristics

DS12943 - Rev 1

page 3/13

Obsolete

Product(s)

- Obsolete

Product(s)