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NX8564 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 NX8564
功能描述  LASER DIODE
PDF  16 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

NX8564 数据表(HTML) 3 Page - Renesas Technology Corp

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DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10186EJ03V0DS (3rd edition)
Date Published January 2004 CP(K)
Printed in Japan
LASER DIODE
NX8564/8565/8566LE Series
EA MODULATOR INTEGRATED
1 550 nm MQW-DFB LASER DIODE MODULE FOR
2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS
 NEC Compound Semiconductor Devices 2000, 2004
The mark
shows major revised points.
DESCRIPTION
The NX8564/8565/8566LE Series is an Electro-Absorption (EA) modulator
integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed
Feed-Back (DFB) laser diode. The module is capable of 2.5 Gb/s applications
of over 360 km, 600 km, 240 km ultralong-reach and available for Dense
Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T
recommendations, enabling a wide range of applications.
FEATURES
• Integrated electroabsorption modulator
• Very low dispersion penalty
(over 360 km (6480 ps/nm), NX8564LE-BC/CC)
(over 600 km (10800 ps/nm), NX8565LE-BC/CC)
(over 240 km (4320 ps/nm), NX8566LE-BC/CC)
• Low modulation voltage
• Available for DWDM wavelengths based on ITU-T recommendations
(100 GHz grid, refer to ORDERING INFORMATION)



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