Data Sheet

ADL8100

GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz

Rev. 0

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FEATURES

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Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz

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Single positive supply (self biased)

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High gain: 20 dB typical from 0.01 GHz to 6 GHz

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High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz

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RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP

APPLICATIONS

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Satellite communication

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Telecommunications

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Civilian radars

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Military radars

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Weather radars

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Electronic warfare

GENERAL DESCRIPTION

The ADL8100 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), wideband low noise amplifier (LNA) that oper-

ates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical

gain of 20 dB at 0.01 GHz to 6 GHz, a 2.5 dB typical noise figure at

6 GHz to 14 GHz, and a typical output third-order intercept (OIP3)

of 38 dBm at 0.01 GHz to 6 GHz, requiring only 220 mA from a

5 V supply voltage. The power dissipation can be lowered at the

expense of OIP3 and output power. The ADL8100 also features

inputs and outputs that are DC-coupled and internally matched to

50 Ω.

The ADL8100 is housed in a RoHS-compliant, 2 mm × 2 mm,

8-lead LFCSP.

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram