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ADL8141ACPZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADL8141ACPZN-R7
功能描述  GaAs, pHEMT, MMIC, Low Noise Amplifier, 14 GHz to 24 GHz
PDF  22 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL8141ACPZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADL8141
GaAs, pHEMT, MMIC, Low Noise Amplifier, 14 GHz to 24 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Low noise, high gain LNA for Ku and K band
Frequency range: 14 GHz to 24 GHz
Low noise figure: 1.4 dB typical at 15 GHz to 22 GHz
High gain: 29 dB typical at 14 GHz to 15 GHz
Integrated AC coupling capacitors
Integrated bias inductor
Single positive supply: 2 V with IDQ = 25 mA
RBIAS drain current adjustment pin
RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP
APPLICATIONS
Ku band and K band satellite communications
GENERAL DESCRIPTION
The ADL8141 is a low power consumption, low noise amplifier
that operates from 14 GHz to 24 GHz. Typical gain, noise figure,
and output third-order intercept (OIP3) are 29 dB, 1.4 dB, and 18
dBm, respectively. Typical supply current is 25 mA from a 2 V
supply. OIP3 and output power for 1 dB compression (OP1dB) can
be increased by adjusting a supply-referenced resistor connected
to the RBIAS pin. The RF input and output of the ADL8141 are
internally matched and AC-coupled.
The ADL8141 is fabricated on a gallium arsenide (GaAs), pseu-
domorphic high electron mobility transistor (pHEMT), monolithic
microwave integrated circuit (MMIC) process. The ADL8141 is
housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP and is
specified for operation from −40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram


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