April 1995

2

Philips Semiconductors

Product specification

N-channel enhancement mode vertical

D-MOS transistor

BSP89

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a

SOT223 envelope, intended for use

as a surface-mounted device in line

current interrupters in telephone sets

and for application in relay, high

speed and line transformer drivers.

PINNING - SOT223

PIN

DESCRIPTION

Code: BSP89

1

gate

2

drain

3

source

4

drain

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

drain-source voltage

240

V

DC drain current

350

mA

drain-source on-resistance

6

Ω

gate-source threshold voltage

2

V

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

MAM109

4

12

3

Top view

s

d

g

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

Note

1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

240

V

±V

GSO

gate-source voltage

open drain

−

20

V

DC drain current

−

350

mA

peak drain current

−

1.4

A

total power dissipation

−

1.5

W

storage temperature range

−65

150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

THERMAL RESISTANCE

from junction to ambient (note 1)

83.3 K/W