1999 Apr 26

2

Philips Semiconductors

Product specification

PNP high-voltage transistors

BST15; BST16

FEATURES

• Low current (max. 200 mA)

• High voltage (max. 300 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP high-voltage transistor in a SOT89 plastic package.

NPN complements: BST39 and BST40.

MARKING

TYPE NUMBER

MARKING CODE

BST15

BT1

BST16

BT2

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

123

Bottom view

MAM297

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BST15

−−200

V

BST16

−−350

V

collector-emitter voltage

open base

BST15

−−200

V

BST16

−−300

V

emitter-base voltage

open collector

BST15

−−4V

BST16

−−6V

collector current (DC)

−−200

mA

peak collector current

−−400

mA

peak base current

−−200

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C