BST15 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

PNP high-voltage transistors

BST15; BST16

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

BST15

IE = 0; VCB = −175 V

−−100

BST16

IE = 0; VCB = −280 V

−−100

IEBO

emitter cut-off current

BST15

IC = 0; VEB = −4V

−−100

BST16

IC = 0; VEB = −6V

−−100

hFE

DC current gain

IC = −50 mA; VCE = −10 V

BST15

150

BST16

120

VCEsat

collector-emitter saturation voltage

IC = −50 mA; IB = −5mA

−

750

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −10 V;

f = 100 MHz

−

MHz

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