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©

2001

MOS FIELD EFFECT TRANSISTOR

µµµµPA2450

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

G15612EJ1V0DS00 (1st edition)

Date Published

March 2002 NS CP(K)

Printed in Japan

DESCRIPTION

The

µ PA2450 is a switching device which can be driven

directly by a 2.5 V power source.

This device features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

FEATURES

• 2.5 V drive avaliable

• Low on-state resistance

RDS(on)1 = 17.5 m

Ω MAX. (VGS = 4.5 V, ID = 4.0 A)

RDS(on)2 = 18.5 m

Ω MAX. (VGS = 4.0 V, ID = 4.0 A)

RDS(on)3 = 22.0 m

Ω MAX. (VGS = 3.1 V, ID = 4.0 A)

RDS(on)4 = 27.5 m

Ω MAX. (VGS = 2.5 V, ID = 4.0 A)

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA2450TL

6PIN HWSON (4521)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±12

V

Drain Current (DC) (TA = 25°C)

ID(DC)

±8.6

A

Drain Current (pulse)

Note1

ID(pulse)

±80

A

Total Power Dissipation (2 unit)

Note2

PT1

2.5

W

Total Power Dissipation (2 unit)

Note3

PT2

0.7

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. TA = 25°C Mounted on ceramic board.

3. TA = 25°C Mounted on FR4 board.

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

1

2

3

6

5

4

4.4

±0.1

5.0

±0.1

7

(0.9)

(0.15)

(3.05)

(0.50)

1,2:

3:

7:

Source 1

Gate 1

Drain

5,6:

4:

Source 2

Gate 2

EQUIVALENT CIRCUIT

Source2

Body

Diode

Gate

Protection

Diode

Gate2

Drain2

Source1

Body

Diode

Gate

Protection

Diode

Gate1

Drain1