UPA2450TL datasheet(4/10 Pages) RENESAS

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Data Sheet G15612EJ1V0DS

µµµµPA2450

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

µA

Gate Leakage Current

IGSS

VGS = ±12 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1.0 mA

0.5

1.0

1.5

Forward Transfer Admittance

| yfs |VDS = 10 V, ID = 4.0 A

5.0

Drain to Source On-state Resistance

RDS(on)1

VGS = 4.5 V, ID = 4.0 A

17.5

Ω

RDS(on)2

VGS = 4.0 V, ID = 4.0 A

11.5

14.5

18.5

Ω

RDS(on)3

VGS = 3.1 V, ID = 4.0 A

12.0

16.5

22.0

Ω

RDS(on)4

VGS = 2.5 V, ID = 4.0 A

15.3

20.5

27.5

Ω

Input Capacitance

Ciss

VDS = 10 V

540

Output Capacitance

Coss

VGS = 0 V

200

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

120

Turn-on Delay Time

td(on)

VDD = 10 V, ID = 4.0 A

Rise Time

VGS = 4.0 V

160

Turn-off Delay Time

td(off)

RG = 6.0

Ω

190

Fall Time

200

Total Gate Charge

VDD = 16 V

9.0

Gate to Source Charge

QGS

VGS = 4.0 V

1.5

Gate to Drain Charge

QGD

ID = 8.6 A

4.5

Body Diode Forward Voltage

VF(S-D)

IF = 8.6 A, VGS = 0 V

0.83

Reverse Recovery Time

trr

IF = 8.6 A, VGS = 0 V

300

Reverse Recovery Charge

Qrr

di/dt = 100 A /

µs

760

TEST CIRCUIT 2 GATE CHARGE

TEST CIRCUIT 1 SWITCHING TIME

PG.

VGS

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

PG.

Ω

D.U.T.

VDD

IG = 2 mA

VGS

Wave Form

VDS

Wave Form

VGS

VDS

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

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