2

CPM3-1700-R020E Rev. 1 , 09-2021

Electrical Characteristics (T

C = 25˚C unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

V(BR)DSS

Drain-Source Breakdown Voltage

1700

V

VGS = 0 V, ID = 40 μA

VGS(th)

Gate Threshold Voltage

1.8

2.5

3.6

V

VDS = VGS, ID = 25.4 mA

Fig. 11

2.0

V

VDS = VGS, ID = 25.4 mA, TJ = 175ºC

IDSS

Zero Gate Voltage Drain Current

1

40

μA

VDS = 1700 V, VGS = 0 V

IGSS

Gate-Source Leakage Current

1

250

nA

VGS = 15 V, VDS = 0 V

R

DS(on)

Drain-Source On-State Resistance

12.3

17.5

22.8

mΩ

VGS = 15 V, ID = 92.2 A

Fig. 4,

5, 6

40.3

VGS = 15 V, ID = 92.2 A, TJ = 175ºC

gfs

Transconductance

63

S

VDS= 20 V, IDS= 92.2 A

Fig. 7

61

VDS= 20 V, IDS= 92.2 A, TJ = 175ºC

Ciss

Input Capacitance

7667

pF

VGS = 0 V, VDS = 1000 V

f = 100 kHz

VAC = 25 mV

Fig. 17,

18

Coss

Output Capacitance

188

Crss

Reverse Transfer Capacitance

10

Eoss

Coss Stored Energy

292

μJ

Fig. 16

RG(total)

Total Internal Gate Resistance

5.2

7.4

9.6

Ω

f = 1 MHz, VAC = 25 mV

Qgs

Gate to Source Charge

80

nC

VDS = 1200 V, VGS = -4 V/15 V

ID = 92.2 A

Per IEC60747-8-4 pg 21

Fig. 12

Qgd

Gate to Drain Charge

70

Qg

Total Gate Charge

249

Reverse Diode Characteristics (T

C = 25˚C unless otherwise specified)

rse Diode Characteristics (TC = 25˚C unless otherwise

secified)1

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

VSD

Diode Forward Voltage

4.9

V

V

GS = -4 V, ISD = 46.1 A, TJ = 25 °C

Fig. 8,

9, 10

4.3

V

V

GS = -4 V, ISD = 46.1 A, TJ = 175 °C

t

rr

Reverse Recovery time

43

ns

V

GS = -4 V, IF = 92.2 A, VR = 1200 V

dif/dt = 4000 A/µs, T

J = 175 °C

Q

rr

Reverse Recovery Charge

2557

nC

I

rrm

Peak Reverse Recovery Current

87

A

Note: When using SiC Body Diode the maximum recommended V

GS = -4V

Specifications at -55°C and +175°C are not tested and are guaranteed by design and characterization