4

CPM3-1700-R020E Rev. 1 , 09-2021

Typical Performance

Figure 8. Body Diode Characteristic at -55 ºC

Figure 9. Body Diode Characteristic at 25 ºC

Figure 10. Body Diode Characteristic at 175 ºC

Figure 7. Transfer Characteristic for

Various Junction Temperatures

Figure 11. Threshold Voltage vs. Temperature

Figure 12. Gate Charge Characteristics

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-55

-30

-5

20

45

70

95

120

145

170

Junction Temperature TJ (°C)

Conditons

VGS = VDS

IDS = 25.4 mA

All the graphs are based on the TO-247-4L (which has higher thermal resistance than most packages)

0

20

40

60

80

100

120

140

160

180

200

0

2

4

6

8

10

12

14

Gate-Source Voltage, VGS (V)

Conditions:

VDS = 20 V

tp < 200 µs

TJ = 25 °C

TJ = -55 °C

TJ = 175 °C

-300

-250

-200

-150

-100

-50

0

-10

-8

-6

-4

-2

0

Drain-Source Voltage VDS (V)

Conditions:

Tj = -55°C

tp < 200 µs

VGS = -2 V

VGS = -4 V

VGS = 0 V

-300

-250

-200

-150

-100

-50

0

-10

-8

-6

-4

-2

0

Drain-Source Voltage VDS (V)

Conditions:

Tj = 25°C

tp < 200 µs

VGS = -2 V

VGS = -4 V

VGS = 0 V

-300

-250

-200

-150

-100

-50

0

-8

-7

-6

-5

-4

-3

-2

-1

0

Drain-Source Voltage VDS (V)

Conditions:

Tj = 175°C

tp < 200 µs

VGS = -2 V

VGS = -4 V

VGS = 0 V

-4

0

4

8

12

16

0

40

80

120

160

200

240

280

Gate Charge, QG (nC)

Conditions:

IDS = 92.2 A

IGS = 50 mA

VDS = 1200 V

TJ = 25 °C