GTRA262802FC-V2-R2 datasheet(1/9 Pages) WOLFSPEED

部件名	GTRA262802FC-V2-R2

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

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Rev. 03.3, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA262802FC

Package Types: H-37248C-4

PN: GTRA262802FC

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance, 2605 MHz, 48 V,

combined outputs, 16 µs pulse width, 10% duty

cycle

- Output power at P

3dB = 250 W

- Efficiency = 62%

- Gain = 14.4 dB

• Capable of handling 10:1 VSWR @48 V, 38 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

250 W, 48 V, 2490 – 2690 MHz

Description

The GTRA262802FC is a 250-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

V

DD = 48 V, IDQ = 100 mA, VGS(PEAK) = VGS @IDQ = 200 mA – 2.05 V, POUT = 38 W avg, ƒ = 2635 MHz, 3GPP signal, 3.84 MHz channel

bandwidth, 10 dB peak/average @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

13.5

14

—

dB

Drain Efficiency

h

D

49

54

—

%

Adjacent Channel Power Ratio

ACPR

—

–28

–24.5

dBc

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-70

-50

-30

-10

10

30

50

70

0

4

8

12

16

20

24

28

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 100 mA,

VGS(PEAK) = –5.0 V, ƒ = 2635 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtra262802fc_g1

类似零件编号 - GTRA262802FC-V2-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA262802FC-V2-R2	497Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz

More results

类似说明 - GTRA262802FC-V2-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA262802FC	497Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTRA263902FC	531Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Rev. 04.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27