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PTFC270101M-V1-R1K 数据表(PDF) 1 Page - WOLFSPEED, INC.

部件名 PTFC270101M-V1-R1K
功能描述  High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 9002700 MHz
PDF  22 Pages
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制造商  WOLFSPEED [WOLFSPEED, INC.]
网页  https://www.wolfspeed.com/
标志 WOLFSPEED - WOLFSPEED, INC.

PTFC270101M-V1-R1K 数据表(HTML) 1 Page - WOLFSPEED, INC.

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 0
7, 2023-06-28
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFC270101M
PTFC270101M
Package PG-SON-10
High Power RF LDMOS Field Effect Transistor
10 W, 28 V, 900 – 2700 MHz
Features
• Unmatched input and output
• Typical CW performance, 2170 MHz, 28 V
- Output power @ P1dB = 10 W
- Gain = 20 dB
- Efficiency = 60%
• Typical two-carrier WCDMA performance, 2170 MHz, 28
V, 8 dB PAR
- Output power = 1.3 W avg
- Gain = 21 dB
- Efficiency = 21%
- ACPR = –44.9 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW)
output power
• Integrated ESD protection
• Pb-free and RoHS compliant
Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
RF Characteristics
Two-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
VDD = 28 V, IDQ = 120 mA, POUT = 2.4 W avg, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
19.5
20.5
dB
0
10
20
30
40
50
60
70
16
17
18
19
20
21
22
23
24
26
28
30
32
34
36
38
40
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
Gain
Efficiency
c270101m-2.1-gr1c


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