捷径   PTFC270101M-V1-R1K(1) 被推存结果. 如同  PTFC270101M-V1-R1K(1) 开始   No Data 结尾   No Data 包括   No Data 制造商

制造商 部件名 数据表 功能描述 WOLFSPEED, INC. PTFC270101M-V1-R1K 933Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28 Search Partnumber : Start with "PTFC270101M-V1-R1K" - Total : 36 ( 1/2 Page) Infineon Technologies A... PTFC270101MV1R1K 410Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26 PTFC270101MV1R1KXUMA1 410Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26 PTFC270101M 409Kb/21P High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01 PTFC270101M 410Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26 WOLFSPEED, INC. PTFC270101M 933Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28 Cree, Inc PTFC270101M 970Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Infineon Technologies A... PTFC270101M 410Kb/22P High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 ??2700 MHz Rev. 04.1, 2016-07-26 PTFC270101M 409Kb/21P High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01 Cree, Inc PTFC270051M 745Kb/14P High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Infineon Technologies A... PTFC270051M 293Kb/14P High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Rev. 01.1, 2016-07-26 PTFC270051MV2R1K 293Kb/14P High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 ??2700 MHz Rev. 01.1, 2016-07-26 PTFC210202FC 431Kb/9P Thermally-Enhanced High Power RF LDMOS FET Rev. 03.2, 2014-05-14 PTFC210202FC 655Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22 Cree, Inc PTFC210202FC 700Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz WOLFSPEED, INC. PTFC210202FC 828Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28 PTFC210202FC-V1 828Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28 PTFC210202FC-V1-R0 828Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28 PTFC210202FC-V1-R250 828Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Rev. 06, 2023-06-28 Infineon Technologies A... PTFC210202FCV1R0 655Kb/9P Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22

PTFC270101M-V1-R1K 数据表, PDF [销售商]

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