PXFE211507FC-V1-R0 datasheet(1/8 Pages) WOLFSPEED

部件名	PXFE211507FC-V1-R0

功能描述	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz

PDF	8 Pages

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

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1 / 8 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 0

4, 2023-06-28

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXFE211507FC

Package H-37248G-4/2

Thermally-Enhanced High Power RF LDMOS FET

170 W, 28 V, 2110 – 2170 MHz

Features

• Broadband internal input and output matching

• Typical Pulsed CW performance, 2140 MHz, 28 V, single

side, 16 µs, 10% duty cycle, class AB test

- Output power at P1dB = 172 W

- Output power at P3dB = 208 W

- Efficiency at P3dB = 64.4%

- Gain = 20.3 dB

• Capable of handling 10:1 VSWR @ 28 V, 120 W (CW)

output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi-

standard cellular power amplifier applications in the 2110 to 2170 MHz

frequency band. Features include input and output matching, high gain

and thermally-enhanced package with earless flange. Manufactured with

Wolfspeed's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability

Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)

VDD = 28 V, IDQ = 900 mA, POUT = 50 W avg, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01%

CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17

18

—

dB

Drain Efficiency

hD

33

35

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–27.5

dBc

Output PAR at 0.01% probability on CCDF

OPAR

5.5

6

—

dB

PXFE211507FC

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ= 900 mA, ƒ = 2170 MHz

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxfe211507fc_g1

类似零件编号 - PXFE211507FC-V1-R0

制造商	部件名	数据表	功能描述
Cree, Inc	PXFE211507FC-V1-R0	587Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz

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类似说明 - PXFE211507FC-V1-R0

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Infineon Technologies A...	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
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	PXFE211507FC	587Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz
WOLFSPEED, INC.	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-23