PEMD2_PIMD2_PUMD2

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Product data sheet

Rev. 8 — 14 November 2013

9 of 18

NXP Semiconductors

PEMD2; PIMD2; PUMD2

NPN/PNP resistor-equipped transistors; R1 = 22 k

, R2 = 22 k

f=1MHz; Tamb =25 CVCE =5V; Tamb =25 C

Fig 9.

TR1 (NPN): Collector capacitance as a function

of collector-base voltage; typical values

Fig 10. TR1 (NPN): Transition frequency as a function

of collector current; typical values of built-in

transistor

VCE = 5V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

IC/IB =20

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 40 C

Fig 11. TR2 (PNP): DC current gain as a function of

collector current; typical values

Fig 12. TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

VCB (V)

050

40

20

30

10

006aac798

1

2

3

Cc

(pF)

0

006aac757

IC (mA)

10-1

102

10

1

102

103

fT

(MHz)

10

IC (mA)

-10-1

-102

-10

-1

006aac800

102

10

103

hFE

1

(1)

(2)

(3)

006aac801

IC (mA)

-10-1

-102

-10

-1

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)