M16CSLASH62 datasheet(73/87 Pages) RENESAS

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M16C/62 Group (M16C/62P, M16C/62PT)

5. Electrical Characteristics (M16C/62PT)

page 73

Table 5.53 Flash Memory Version Electrical Characteristics (1) for 100 cycle products

Table 5.55 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics

(at Topr = 0 to 60oC)

Table 5.54 Flash Memory Version Electrical Characteristics (6)

for 10,000 cycle products (Block A and Block 1 (7))

Min.

Typ.

Max.

Word program time (VCC1=5.0V, Topr=25

°C)

Block erase time

(VCC1=5.0V, Topr=25

°C)

Erase all unlocked blocks time (2)

Lock bit program time

ParameterUnit

Standard

0.3

200

µs

4 X n

Flash memory circuit stabilization wait time

tPS

µs

Symbol

Program and erase endurance (3)

100

4K bytes block

8K bytes block

32K bytes block

64K bytes block

Data hold time (5)

0.3

0.5

0.8

Min.

Typ.

Max.

Word program time (VCC1=5.0V, Topr=25

°C)

Block erase time

(VCC1=5.0V, Topr=25

°C)

Lock bit program time

Parameter

Unit

Standard

0.3

µs

Symbol

Program and erase endurance (3, 8, 9)

10,000 (4)

4K bytes block

Flash memory circuit stabilization wait time

tPS

µs

Data hold time (5)

cycle

year

NOTES :

1.Referenced to VCC1=4.5 to 5.5V at Topr = 0 to 60

°C unless otherwise specified.

2.n denotes the number of block erases.

3.Program and Erase Endurance refers to the number of times a block erase can be performed.

If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.

For example, if a 4K bytes block A is erased after writing 1 word data 2,048 times, each to a different address, this

counts as one program and erase endurance. Data cannot be written to the same address more than once without

erasing the block. (Rewrite prohibited)

4.Maximum number of E/W cycles for which operation is guaranteed.

5.Topr = -40 to 85

°C (T version) / -40 to 125 °C (V version).

6.Referenced to VCC1 = 4.0 to 5.5V at Topr = -40 to 85

°C (T version) / -40 to 125 °C (V version) unless otherwise specified.

7.Table 5.55 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.54.

8.To reduce the number of program and erase endurance when working with systems requiring numerous rewrites,

write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are

used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary.

Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to

track the total number of times erasure is used.

9.Should erase error occur during block erase, attempt to execute clear status register command, then block erase

command at least three times until erase error disappears.

10.Customers desiring E/W failure rate information should contact their Renesas technical support representative.

Flash program, erase voltage

Flash read operation voltage

VCC1=5.0 ± 0.5 V

VCC1=4.0 to 5.5 V

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