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C30659-1060nm Series

C30659-1060nm Series

Ω AC Coupled

1060nm Silicon APD

Detector Type

C30659-1060-3A

C30659-1060-R8B

(Si APD C30956E)

(Si APD C30954E)

Min

Typ

Max

Min

Typ

Max

Active Diameter

3.0

0.8

mm

Active Area

7.1

0.5

Bandwidth Range

50

200

MHz

for constant Gain

-

2.2

-

-

2.2

-

V/°C

VR for specified responsivity

275

Note 1

425

275

Note 1

425

V

Temperature sensor sensitivity

-1.8

-2.1

-2.4

-1.8

-2.1

-2.4

mV/°C

Responsivity

At 900nm

-

450

-

-

370

-

kV/W

At 1060nm

-

280

-

-

200

-

kV/W

-

22

-

-

12

-

k

Ω

Noise Equivalent Power (NEP) (note 3)

f - 100 kHz,

∆f = 1.0 Hz

At 900nm

-

55

80

-

55

80

fW/

√Hz

At 1060nm

-

90

125

-

100

150

fW/

√Hz

Output Spectral Voltage:

-

25

35

-

20

30

nV/

√Hz

Output Impedance

33

40

50

33

40

50

Ω

40

50

-

175

200

-

MHz

λ = 900 and 1060nm)

10% to 90% points

-

7

-

-

2

-

ns

λ = 830 and 900nm)

90% to 10% points

-

7

-

-

2

-

ns

Recovery time after overload (note 4)

-

-

150

-

-

150

ns

Output Voltage Swing (1k

Ω load) (note 5)

2

3

-

2

3

-

V

Output Voltage Swing (50

Ω load) (note 5)

0.7

0.9

-

0.7

0.9

-

V

Output Offset Voltage

-1

0.25

1

-1

0.25

1

V

Positive Supply Current (V+)

-

20

35

-

20

35

mA

Negative Supply Current (V-)

-

10

20

-

10

20

mA

3. NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.

4. 0dBm, 250ns pulse.

5. Pulsed operation.

117142_C30659.qxd

6/21/04

2:33 PM

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