C30659-1550-R2A datasheet(1/9 Pages) PERKINELMER

部件名	C30659-1550-R2A

功能描述	Silicon and InGaAs APD Preamplifier Modules

PDF	9 Pages

Scroll/Zoom	100%

制造商	PERKINELMER [PerkinElmer Optoelectronics]

网页	http://www.perkinelmer.com

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1 / 9 page

C30659-900-1060-1550nm Series

Silicon and InGaAs APD Preamplifier Modules

Description

PerkinElmer C30659 Series includes a

Silicon or InGaAs Avalanche

Photodiode with a hybrid preamplifier.

It is supplied in a single modified

12-lead TO-8 package.

The avalanche photodiodes used in

these devices are the C30817E,

C30902E, C30954E, C30956E,

C30645E and C30662E that provide

very good response between 830 and

1550 nanometers and very fast rise

and fall times at all wavelengths. The

preamplifier section uses a very low

noise GaAs FET front end designed to

operate at higher transimpedance

than the regular C30950 series.

Optoelectronics

Applications

Range Finding

Confocal Microscope

LIDAR

Featur

Features

es

System bandwidth 50 MHz and

200 MHz

Ultra low noise equivalent power

(NEP)

Spectral response range:

Silicon APD: 400 to 1100nm

InGaAs APD: 1100 to 1700nm

Power consumption (150 mW typ.)

+/-5 Volts amplifier operating

voltages

50

Ω AC Load capability

Hermetically sealed TO-8 packages

High reliability

Fast overload recovery

Pin compatible with the C30950

series

Light entry angle

∅130°

The C30659 is pin to pin compatible

with the C30950 series. The output

of the C30659 is negative. An emitter

follower is used as an output buffer

stage. To obtain the wideband

characteristics, the output of these

devices should be AC (capacitively)

coupled to a 50 Ohm termination.

The module must not be DC coupled

to loads of less than 2,000 Ohms.

For field use, it is recommended that

a temperature compensated HV

supply be employed to maintain

responsivity constant over

temperature.

www .optoelectr onics.perkinelmer.com

Preliminary Data Sheet

117142_C30659.qxd

6/21/04

2:33 PM

Page 1

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