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74HC3G34DC-Q100 数据表(PDF) 6 Page - Nexperia B.V. All rights reserved |
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74HC3G34DC-Q100 数据表(HTML) 6 Page - Nexperia B.V. All rights reserved |
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6 / 13 page ![]() Nexperia 74HC3G34-Q100; 74HCT3G34-Q100 Triple buffer gate -40 °C to +85 °C -40 °C to +125 °C Symbol Parameter Conditions Min Typ[1] Max Min Max Unit 74HCT3G34 nA to nY; see Figure 4 [2] tpd propagation delay VCC = 4.5 V - 10 23 - 29 ns tt transition time nY; VCC = 4.5 V; see Figure 4 [3] - 6 19 - 25 ns CPD power dissipation capacitance VI = GND to VCC - 1.5 V [4] - 9 - - - pF [1] All typical values are measured at Tamb = 25 °C. [2] tpd is the same as tPLH and tPHL. [3] tt is the same as tTLH and tTHL. [4] CPD is used to determine the dynamic power dissipation (PD in μW). PD = CPD x VCC2 x fi x N + Σ(CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL x VCC2 x fo) = sum of outputs. 11.1 Waveform and test circuit 001aad982 tPLH tPHL VM VM 90 % 10 % VM VM output nY input nA VI GND VOH VOL tTLH tTHL Measurement points are given in Table 9. VOL and VOH are typical voltage output levels that occur with the output load. Figure 4. Propagation delay data input (nA) to data output (nY) and transition time output (nY) Table 9. Measurement points Input Output Type VM VM 74HC3G34-Q100 0.5 x VCC 0.5 x VCC 74HCT3G34-Q100 1.3 V 1.3 V 74HC_HCT3G34_Q100 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved. Product data sheet Rev. 2 — 11 June 2018 6 / 13 |
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