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UPD78P9014 数据表(PDF) 39 Page - Renesas Technology Corp

部件名 UPD78P9014
功能描述  MOS INTEGRATED CIRCUIT
PDF  50 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

UPD78P9014 数据表(HTML) 39 Page - Renesas Technology Corp

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µPD78P9014
37
AC Programming Characteristics (TA = 25
°C, VDD = 5.5 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0 V)
Parameter
Symbol
Note 1
Test Conditions
MIN.
TYP.
MAX.
Unit
Address setup timeNote 2
tAS
tAS
2
µs
(vs. MD0
↓)
MD1 setup time (vs. MD0
↓)tM1S
tOES
2
µs
Data setup time (vs. MD0
↓)tDS
tDS
2
µs
Address hold timeNote 2
tAH
tAH
2
µs
(vs. MD0
↓)
Data hold time (vs. MD0
↑)tDH
tDH
2
µs
MD0
↑ → data output float
tDF
tDF
0
130
µs
delay time
VPP setup time (vs. MD3
↑)tVPS
tVPS
2
µs
VDD setup time (vs. MD3
↑)tVDS
tVCS
2
µs
Initial program pulse width
tPW
tPW
0.95
1.0
1.05
ms
Additional program pulse width
tOPW
tOPW
0.95
21.0
ms
MD0 setup time (vs. MD1
↑)tMOS
tCES
2
µs
MD0
↑ → data output delay time
tDV
tDV
MD0 = MD1 = VIL
1
µs
MD1 hold time (vs. MD0
↑)tM1H
tOEH
tM1H + tM1R
≥ 50
µs2
µs
MD1 recovery time (on MD0
↓)tM1R
tOR
2
µs
Program counter reset time
tPCR
–
10
µs
X1 input high/low level widths
tXH, tKL.
–
0.125
µs
X1 input frequency
fX
–
4.19
MHZ
Initial mode set time
tI
–
2
µs
MD3 setup time (vs. MD1
↑)tM3S
–
2
µs
MD3 hold time (vs. MD1
↓)tM3H
–
2
µs
MD3 setup time (vs. MD0
↓)tM3SR
–
During program memory read
2
µs
AddressNote 2
→ data output
tDAD
tACC
During program memory read
2
µs
delay time
AddressNote 2
→ data output
tHAD
tOH
During program memory read
0
130
ns
hold time
MD3 hold time (vs. MD0
↑)tM3HR
–
During program memory read
2
µs
MD3
↓ → data output float
tDFR
–
During program memory read
2
µs
delay time
Notes 1. Symbol corresponding to those of
µPD27C256A.
2. The internal address signal is incremented by one at the rising edge of the fourth X1 input and is not
connected to a pin.



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