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STTH212 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH212
功能描述  High voltage ultrafast diode
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH212 数据表(HTML) 2 Page - STMicroelectronics

  STTH212 Datasheet HTML 1Page - STMicroelectronics STTH212 Datasheet HTML 2Page - STMicroelectronics STTH212 Datasheet HTML 3Page - STMicroelectronics STTH212 Datasheet HTML 4Page - STMicroelectronics STTH212 Datasheet HTML 5Page - STMicroelectronics STTH212 Datasheet HTML 6Page - STMicroelectronics STTH212 Datasheet HTML 7Page - STMicroelectronics STTH212 Datasheet HTML 8Page - STMicroelectronics STTH212 Datasheet HTML 9Page - STMicroelectronics  
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1 Electrical characteristics
STTH212
2/9
1
Electrical characteristics
To evaluate the conduction losses use the following equation: P = 1.26 x IF(AV) + 0.12 IF2(RMS)
Table 1.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
V(RMS)
RMS voltage
850
V
IF(AV)
Average forward current
δ = 0.5
DO-201AD
Tl = 105°C
2A
SMB
Tl = 90°C
SMC
Tl = 105°C
IF(RMS)
RMS forward current
DO-201AD, SMB, SMC
10
A
IFSM
Forward surge current tp = 8.3ms
DO-201AD, SMB, SMC
40
A
Tstg
Storage temperature range
-50 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
L = 10 mm
DO-201AD
20
°C/W
SMB
25
SMC
20
Rth(j-a)
Junction to ambient
L = 10 mm
DO-201AD
75
°C/W
Table 3.
Static Electrical Characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
Reverse leakage current
Tj = 25°C
VR = VRRM
10
µA
Tj = 125°C
100
VF
Forward voltage drop
Tj = 25°C
IF = 2A
1.75
V
Tj = 125°C
1.07
1.50
Tj = 150°C
1.0
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