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STTH212 数据表(PDF) 5 Page - STMicroelectronics

部件名 STTH212
功能描述  High voltage ultrafast diode
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH212 数据表(HTML) 5 Page - STMicroelectronics

  STTH212 Datasheet HTML 1Page - STMicroelectronics STTH212 Datasheet HTML 2Page - STMicroelectronics STTH212 Datasheet HTML 3Page - STMicroelectronics STTH212 Datasheet HTML 4Page - STMicroelectronics STTH212 Datasheet HTML 5Page - STMicroelectronics STTH212 Datasheet HTML 6Page - STMicroelectronics STTH212 Datasheet HTML 7Page - STMicroelectronics STTH212 Datasheet HTML 8Page - STMicroelectronics STTH212 Datasheet HTML 9Page - STMicroelectronics  
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STTH212
1 Electrical characteristics
5/9
Figure 11. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 12. Forward recovery time versus dIF/dt
(typical values)
Figure 13. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 14. Thermal resistance versus lead
length
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, eCU = 35µm)
Figure 16. Thermal resistance junction to
ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, ecu = 35 µm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0
1020
30
4050
60
70
8090
100
V (V)
FP
I
F=I
F(AV)
T
j=125°C
dl /dt(A/µs)
F
200
220
240
260
280
300
320
340
360
380
400
420
0
20
40
60
80
100
t
(ns)
FR
I
F=I
F(AV)
V
FR =1.
1 x V
F max.
T
j=125°C
dl /dt(A/µs)
F
1
10
100
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
Vosc=30mVRMS
Tj=25°C
0
10
20
30
40
50
60
70
80
90
100
5
1015
2025
R
(°C/W)
th(j-a)
L
(mm)
Leads
DO201-AD
Rth(j-a)
Rth(j-l)
0
10
20
30
40
50
60
70
80
01
2345
678
9
10
R
(°C/W)
th(j-a)
S
(cm )
Cu
2
DO-201AD
0
10
20
30
40
50
60
70
80
90
100
110
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R
(°C/W)
th(j-a)
S
(cm )
Cu
2
SMB
SMC



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