Data Sheet

ADL8102

GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz

Rev. 0

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FEATURES

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Single positive supply (self biased)

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Gain: 27 dB typical at 9 GHz to 19 GHz

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OP1dB: 13.5 dB typical at 1 GHz to 9 GHz

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OIP3: 25 dBm typical at 1 GHz to 9 GHz

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Noise figure: 2.5 dB typical at 9 GHz to 19 GHz

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RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP

APPLICATIONS

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Telecommunications

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Satellite communications

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Military radar

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Weather radar

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Civil radar

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Electronic warfare

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADL8102 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), low noise wideband amplifier that operates

from 1 GHz to 22 GHz.

The ADL8102 provides a typical gain of 27 dB at 9 GHz to 19 GHz,

a 2.5 dB typical noise figure from 9 GHz to 19 GHz, a typical output

third-order intercept (OIP3) of 25 dBm at 1 GHz to 9 GHz, and a

saturated output power (PSAT) of up to 15.5 dBm, which requires

only 110 mA from a 5 V supply voltage. The ADL8102 also features

inputs and outputs that are internally matched to 50 Ω. The RFIN

and RFOUT pins are internally AC-coupled, and the bias inductor is

also integrated, which makes it ideal for surface-mounted technolo-

gy (SMT)-based, high capacity microwave radio applications.

The ADL8102 is housed in an RoHS-compliant, 3 mm × 3 mm,

16-lead LFCSP package.