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ADL8102ACPZN-R7 数据表(PDF) 20 Page - Analog Devices

部件名 ADL8102ACPZN-R7
功能描述  GaAs, pHEMT, MMIC, Low Noise Amplifier, 1 GHz to 22 GHz
PDF  23 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL8102ACPZN-R7 数据表(HTML) 20 Page - Analog Devices

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Data Sheet
ADL8102
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 20 of 23
The basic connections for operating the ADL8102 over the speci-
fied frequency range are shown in Figure 75. No external biasing
inductor is required, which allows the 5 V supply to be connected to
the VDD pin. It is recommended to use 1 µF, 100 pF, and 1000 pF
power-supply decoupling capacitors. The power-supply decoupling
capacitors shown in Figure 75 represent the configuration used to
characterize and qualify the ADL8102.
To set IDQ, connect a resistor (R1) between the RBIAS and VDD
pins. A default value of 1150 Ω is recommended, which results in
a nominal IDQ of 110 mA. Table 1 shows how IDQ and IDQ_AMP vary
vs. RBIAS. The RBIAS pin also draws a current that varies with the
value of RBIAS (see Table 1). Do not leave the RBIAS pin open.
Correct sequencing of the DC and RF power is required to safely
operate the ADL8102. During power-up, apply VDD before the RF
power is applied to RFIN, and during power-off, remove the RF
power from RFIN before VDD is powered off.
Figure 75. Typical Application Circuit
For more information on using the evaluation board, refer to the
ADL8102-EVALZ user guide.
Table 9. Recommended RBIAS Values for VDD = 5 V
RBIAS (kΩ)
IDQ (mA)
IDQ_AMP (mA)
IRBIAS (mA)
5.3
40
39.2
0.8
3.72
50
48.9
1.1
2.24
70
68.3
1.7
1.84
80
78
2
1.54
90
87.75
2.25
1.15
110
107.15
2.85
0.85
130
126.55
3.45
0.65
150
146
4



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