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ISCF8001 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISCF8001
功能描述  SiC N-Channel MOSFET
PDF  5 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8001 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8001 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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ISCF8001
SiC N-Channel MOSFET
www.iscsemi.com
2023-8-18
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
1700
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 0.5mA
2.0
--
4.0
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 20V; ID= 2A
--
--
0.75
Ω
VGS= 20V; ID= 2A;TJ=150°C
--
0.95
--
IGSS
Gate Source Leakage Current
VGS= 20V; VDS= 0V
--
--
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1700V, VGS = 0V
--
1
100
μA
gfs
Transconductance
VDS = 20V, ID = 2A
--
1.1
--
S
RG
Gate resistance
VGS=0V,
VAC=25mV,f=1.0MHZ
--
20
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
VAC=25mV
--
382
--
pF
Coss
Output Capacitance
--
3.2
--
Crss
Reverse Transfer Capacitance
--
16
--
Qg
Total Gate Charge
VDD=1200V,
ID=2A,
VGS=-5 to +20V
--
14
--
nC
Qgs
Gate-Source Charge
--
4.8
--
Qgd
Gate-Drain Charge
--
5.6
--
td(on)
Turn-on Delay Time
TJ=25°C,
VGS=-5/+20V,
ID=2A,
VDS=1200V,
Rg=2.5Ω,
inductive load
--
13
--
ns
tr
Turn-on Rise Time
--
20
--
td(off)
Turn-off Delay Time
--
14
--
tf
Turn-off Fall Time
--
10
--
EON
Turn-On Switching Energy
TJ=25°C,
VGS=-5/+20V, ID=2A,
VDS=1200V, Rg=2.5Ω,
L=1478μH
--
37
--
uJ
EOFF
Turn-Off Switching Energy
--
15
--



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