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ISCF8001 数据表(PDF) 3 Page - Inchange Semiconductor Company Limited

部件名 ISCF8001
功能描述  SiC N-Channel MOSFET
PDF  5 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8001 数据表(HTML) 3 Page - Inchange Semiconductor Company Limited

  ISCF8001 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8001 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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ISCF8001
SiC N-Channel MOSFET
www.iscsemi.com
2023-8-18
3
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD= 1A; VGS= 0V;TJ=25°C
--
3.5
--
V
ISD= 1A; VGS= 0V;TJ=150°C
--
3.4
--
trr
Reverse Recovery Time
VGS=-5V,ISD=2A
dI/dt=1200A/us,
Vds=1200V
--
23
--
ns
Qrr
Reverse Recovery Charge
--
31
--
uC
CUICUIT DIAGRAM



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