数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

75N75-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 75N75-TN3-R
功能描述  75Amps, 75Volts N-CHANNEL POWER MOSTFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

75N75-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  75N75-TN3-R Datasheet HTML 1Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 2Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 3Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 4Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 5Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 6Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 7Page - Unisonic Technologies 75N75-TN3-R Datasheet HTML 8Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
75N75
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-097,A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
75
V
TC = 25℃
75
A
Continuous Drain Current
TC = 100℃
ID
56
A
Drain Current Pulsed (Note 1)
IDM
300
A
Gate to Source Voltage
VGS
±
20
V
Single Pulsed (Note 2)
EAS
900
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
300
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15
V/ns
TC = 25℃
220
W
Total Power Dissipation
Derating above 25℃
PD
1.4
W/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal Resistance Junction-Ambient
θJA
62.5
℃
/W
Thermal Resistance Junction-Case
θJC
0.8
℃
/W
Thermal Resistance Case-Sink
θCS
0.5
℃
/W
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
75
V
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 1mA,
Referenced to 25℃
0.08
V/℃
VDS = 75 V, VGS = 0 V
20
µA
Drain-Source Leakage Current
IDSS
VDS = 75 V, VGS = 0 V,
TJ = 150℃
250
µA
Gate-Source Leakage Current
VGS = 20V, VDS = 0 V
100
nA
Gate-Source Leakage Reverse
IGSS
VGS = -20V, VDS = 0 V
-100
nA
On Characteristics
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 µA
2.0
4.0
V
Static Drain-Source On-State
Resistance
RDS(ON)
VGS = 10 V, ID = 48 A
12.5
15
mΩ
Dynamic Characteristics
Input Capacitance
CISS
3300
pF
Output Capacitance
COSS
530
pF
Reverse Transfer Capacitance
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
80
pF
Switching Characteristics
Turn-On Delay Time
tD(ON)
12
ns
Rise Time
tR
79
ns
Turn-Off Delay Time
tD(OFF)
80
ns
Fall Time
tF
VDD = 38V, ID =48A,
VGS=10V, (Note 4, 5)
52
ns
Total Gate Charge
QG
90
140
nC
Gate-Source Charge
QGS
20
35
nC
Gate-Drain Charge (Miller Charge)
QGD
VDS = 60V, VGS = 10 V
ID = 48A, (Note 4, 5)
30
45
nC



Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com