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75N75-TN3-R 数据表(PDF) 7 Page - Unisonic Technologies |
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75N75-TN3-R 数据表(HTML) 7 Page - Unisonic Technologies |
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7 / 8 page ![]() 75N75 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-097,A TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (℃) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 0 1.1 1.0 0.9 0.8 -100 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, TJ (℃) *Note: 1. VGS=10V 2. ID=3.5A -50 200 10 1 0.1 Drain-Source Voltage, VD (V) Maximum Safe Operating 1 100 Case Temperature, TC (℃) 75 100 150 70 Maximum Drain Current vs. Case Temperature 0 125 50 25 20 50 10 100 1000 DC Operation in This Area by RDS(ON) *Note: 1. Tc=25℃ 2. TJ=150℃ 3. Single Pulse 10ms 1ms 100µs 10 30 40 60 0.01 Square Wave Pulse Duration, t1 (sec) 1 1E-5 1 0.1 0.1 10 0.01 Transient Thermal Response Curve 0.02 0.1 0.2 1E-4 1E-3 0.01 *Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC=PDM×ZθJC (t) Single pulse D=0.5 0.05 |
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